![]() ![]() Refer Advantages and disadvantages of LDMOS> for more information. The p +-region contacts with the p-type body. The source and drain contact regions are created from n + regions. Later shallow p + and n + regions are being formed. The device is fabricated using diffusion and ion implantation processes. ![]() gate length, drain diffusion and source diffusion. In LDMOS device, channel is determined by three parameters viz. This E-field is induced by gate and lateral field which exists between S (Source) and D (Drain). In LDMOS channel current is being controlled by vertical electric field (E). It is designed for applications requiring lower on-resistance and higher blocking voltage. VMOS structure is more complex compare to traditional FET device.The gate consists of metallised area over the V groove which controls current flow in P-region.Hence lower ON resistance of the device can be achieved which allows much higher power. V shaped gate makes cross-sectional area of source to drain path larger.Following are the properties of VMOS device.Äue to source at top and drain at bottom, the current flows vertically rather than horizontally. The devices are used for applications requiring medium powers such as VMOS stands for Vertical Metal Oxide Silicon. The n-drift region thickness should be as thin as possible in order to achieve lower drain resistance.The very high breakdown voltage is achieved due to lightly doped drift region between Drain and channel regions.Due to high voltage and high frequency characteristics it is similar to BJT.The breakdown voltage and on-resistance are two important parameters of DMOS device.The surface channel length is defined as the lateral diffusion distanceÄ«etween the p-substrate and the n + source.The p-region is being diffused deeper compare to n + source.The p-region and the n + source regions are diffused through common.The DMOS device uses a double diffusion process.Following are the properties of DMOS device. The other applications of DMOS are Inkjet printheads, automobile control electronics, power supplies etc. The device is widely used in switching applications requiring high voltage and high frequency behavior. It mentions DMOS structure, VMOS structure and LDMOS structure. This page compares DMOS vs VMOS vs LDMOS and mentions difference between DMOS, VMOS and LDMOS. DMOS vs VMOS vs LDMOS | Difference between DMOS, VMOS, LDMOS ![]()
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